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KML0D4N20E Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part KML0D4N20E
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription It s mainly suitable for Load Switching Mobile Phones, Battery Powere d Systems and Level-Shifter.
FEATURES V DSS=20V, ID=0.
4A Drain-Soure ON Resista nce : RDS(ON)=0.
70 @ VGS=4.
5V : RDS(ON) =0.
85 @ VGS=2.
5V : RDS(ON)=1.
25 @ VGS=1 .
8V Super High Dense Cell Design MAXIM UM RATING (Ta=25 ) CHARACTERISTIC SYM BOL N-Ch UNIT Drain-Source Voltage Gat e-Source Voltage VDSS 20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pu lsed Drain Power Dissipation Maximum Junction Temperature Storage Temperatu re Range (Note 1) (Note 1) ID 400 33 0 mA (Note 1) .
Manufacture KEC
Datasheet
Download KML0D4N20E Datasheet
Part KML0D4N20E
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription It s mainly suitable for Load Switching Mobile Phones, Battery Powere d Systems and Level-Shifter.
FEATURES V DSS=20V, ID=0.
4A Drain-Soure ON Resista nce : RDS(ON)=0.
70 @ VGS=4.
5V : RDS(ON) =0.
85 @ VGS=2.
5V : RDS(ON)=1.
25 @ VGS=1 .
8V Super High Dense Cell Design MAXIM UM RATING (Ta=25 ) CHARACTERISTIC SYM BOL N-Ch UNIT Drain-Source Voltage Gat e-Source Voltage VDSS 20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pu lsed Drain Power Dissipation Maximum Junction Temperature Storage Temperatu re Range (Note 1) (Note 1) ID 400 33 0 mA (Note 1) .
Manufacture KEC
Datasheet
Download KML0D4N20E Datasheet

KML0D4N20E

KML0D4N20E
KML0D4N20E

KML0D4N20E

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