KML0D4N20V

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design KML0D4N20V N-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch Drain-Source Voltage Gate-Source Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg 20 6 400 280 650 125 150 150 -55 150 Note 1) *Surface Mounted on 1 1 FR4 Board. t 5 sec UNIT V V mA mW 2014. 8. 05 Revision No : 1 1/4 KML0D4N20V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance BVDSS IDSS IGSS Vth RDS(ON)* gfs* ID=250 A, VGS=0V VGS=0V, VDS=16V VGS= 4.5V, VDS=0V VDS=VGS, ID=250 A VGS=4.5V, ID=400mA VGS=2.5V, ID=350mA VGS=1.8V, ID=300mA VDS=10V, ID=400mA Source-Drain Diode Forward Voltage VSD* IS=150mA, VGS=0V Dynamic Total Gate Charge Qg* Gate-Source Charge Qgs* VDS=10V, ID=250mA, VGS=4.5V Gate-Drain Charge Qgd* Turn-on Delay time Turn-off Delay time td(on)* td(off)* VDD=10V, ID=200mA, VGS=4.5V, RG=10 Note 2) *Pulse test : Pulse width 300 , Duty C...