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KML0D4P20E Datasheet, Equivalent, P-Channel MOSFET.

P-Channel MOSFET

P-Channel MOSFET

 

 

 

Part KML0D4P20E
Description P-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription It s Mainly Suitable for Load Switching Mobile Phones, Battery Powere d Systems and Level-Shifter.
FEATURES V DSS= -20V, ID= -0.
35A Drain-Soure ON Re sistance : RDS(ON)=1.
2 @ VGS= -4.
5V : R DS(ON)=1.
6 @ VGS= -2.
5V : RDS(ON)=2.
7 @ VGS= -1.
8V ESD Protection diode.
KML0 D4P20E P-Ch Trench MOSFET MAXIMUM RATI NG (Ta=25 ) CHARACTERISTIC SYMBOL P-C h UNIT Drain-Source Voltage Gate-Sourc e Voltage VDSS -20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pulsed (N ote 1) (Note 1) (Note 1) ID IDP -350 -255 -1400 mA Drain Power Dissipation (Note 2) PD .
Manufacture KEC
Datasheet
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Part KML0D4P20E
Description P-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General Des cription It s Mainly Suitable for Load Switching Mobile Phones, Battery Powere d Systems and Level-Shifter.
FEATURES V DSS= -20V, ID= -0.
35A Drain-Soure ON Re sistance : RDS(ON)=1.
2 @ VGS= -4.
5V : R DS(ON)=1.
6 @ VGS= -2.
5V : RDS(ON)=2.
7 @ VGS= -1.
8V ESD Protection diode.
KML0 D4P20E P-Ch Trench MOSFET MAXIMUM RATI NG (Ta=25 ) CHARACTERISTIC SYMBOL P-C h UNIT Drain-Source Voltage Gate-Sourc e Voltage VDSS -20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pulsed (N ote 1) (Note 1) (Note 1) ID IDP -350 -255 -1400 mA Drain Power Dissipation (Note 2) PD .
Manufacture KEC
Datasheet
Download KML0D4P20E Datasheet

KML0D4P20E

KML0D4P20E
KML0D4P20E

KML0D4P20E

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