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KU086N10P Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part KU086N10P
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General De scription This Trench MOSFET has bette r characteristics, such as fast switchi ng time, low on resistance, low gate ch arge and excellent avalanche characteri stics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification an d a load switch in battery powered appl ications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.
6m (Max.
) @VGS = 10V MAXIMUM RATING (T c=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Sourc e Voltage Gate-Source Voltage VDSS VGS S 100 V 20 V @TC=25 Drain Current @T C=100 Pulsed .
Manufacture KEC
Datasheet
Download KU086N10P Datasheet
Part KU086N10P
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General De scription This Trench MOSFET has bette r characteristics, such as fast switchi ng time, low on resistance, low gate ch arge and excellent avalanche characteri stics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification an d a load switch in battery powered appl ications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.
6m (Max.
) @VGS = 10V MAXIMUM RATING (T c=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Sourc e Voltage Gate-Source Voltage VDSS VGS S 100 V 20 V @TC=25 Drain Current @T C=100 Pulsed .
Manufacture KEC
Datasheet
Download KU086N10P Datasheet

KU086N10P

KU086N10P
KU086N10P

KU086N10P

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