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Part Number KU086N10P
Manufacturers KEC
Logo KEC
Description N-Channel MOSFET
Datasheet KU086N10P DatasheetKU086N10P Datasheet (PDF)

  KU086N10P   KU086N10P
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 95 50 60 32.5 400* 570 7.1 4.5 167 50 1.33 0.4 A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 ~ 150 Thermal Resistance, Junction-to-Ca.



KML0D4P20E KU086N10P KU086N10F


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