SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications
FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU086N10P KU086N10F
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
100 V 20 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
95 50 60 32.5
400* 570
7.1
4.5 167 50 1.33 0.4
A
mJ mJ V/ns W W/
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
150 -55 ~ 150
Thermal Resistance, Junction-to-Case RthJC
0.75
Thermal Resistance, Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5
/W /W
K
KU086N10P/F
N-ch Trench MOS FET KU086N10P
KU086N10F
PIN CONNECTION
2011. 1. 20
Revision No : 0
1/7
KU086N10P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=5mA, Referenced to 25
IDSS VDS=100V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 20V, VDS=0V
RDS(ON)
VGS=10V, ID=47.5A
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=80V, ID=80A VGS=10V
(Note4,5)
VDD=50V ID=80A RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current Pulsed Source Current
IS VGS