SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES VDSS(Min.)= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
TC=25 Derate above25
ID IDP EAS EAR dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range Thermal Characteristics
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
RATING 100 20 5 3.1 13 12.4
0.1
4.5 17.4 0.14 150 -55 150
7.2 110
UNIT V V
A
mJ mJ V/ns W W/
/W /W
KU3600N10.