KU3600N10D

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 ID IDP EAS EAR dv/dt PD Maximum Junction Temperature Tj Storage Temperature Range Thermal Characteristics Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 100 20 5 3.1 13 12.4 0.1 4.5 17.4 0.14 150 -55 150 7.2 110 UNIT V V A mJ mJ V/ns W W/ /W /W KU3600N10D N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) PIN CONNECTION 2014. 9. 12 Revision No : 2 1/6 KU3600N10D ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown...