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KU3600N10D Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part KU3600N10D
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General De scription This Trench MOSFET has bette r characteristics, such as fast switchi ng time, low on resistance, low gate ch arge and excellent avalanche characteri stics.
It is mainly suitable for LED Li ghting and DC/DC Converters.
FEATURES VDSS(Min.
)= 100V, ID= 5A Drain-Source O N Resistance : RDS(ON)=0.
36 Qg(typ.
) =4 .
2nC (max) @VGS =10V MAXIMUM RATING ( Tc=25 ) CHARACTERISTIC SYMBOL Drain- Source Voltage Gate-Source Voltage VDS S VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche E nergy (Note 1) .
Manufacture KEC
Datasheet
Download KU3600N10D Datasheet
Part KU3600N10D
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA General De scription This Trench MOSFET has bette r characteristics, such as fast switchi ng time, low on resistance, low gate ch arge and excellent avalanche characteri stics.
It is mainly suitable for LED Li ghting and DC/DC Converters.
FEATURES VDSS(Min.
)= 100V, ID= 5A Drain-Source O N Resistance : RDS(ON)=0.
36 Qg(typ.
) =4 .
2nC (max) @VGS =10V MAXIMUM RATING ( Tc=25 ) CHARACTERISTIC SYMBOL Drain- Source Voltage Gate-Source Voltage VDS S VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche E nergy (Note 1) .
Manufacture KEC
Datasheet
Download KU3600N10D Datasheet

KU3600N10D

KU3600N10D
KU3600N10D

KU3600N10D

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