KF19N20D

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 200 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 ID IDP EAS EAR dv/dt PD 15 9.4 45* 215 4.9 4.5 83.3 0.67 Maximum Junction Temperature Tj 150 Storage Temperature Range Thermal Characteristics Tstg -55 150 Thermal Resistance, Junction-to-Case RthJC 1.5 Thermal Resistance, Junction-toAmbient RthJA 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W KF19N20D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF19N20D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF19N20I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE DIM A B C...