SEMICONDUCTOR
TECHNICAL DATA
KPS11N65F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This Super Junction ...
SEMICONDUCTOR
TECHNICAL DATA
KPS11N65F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 28nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
650 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
11* 6.9* 28* 220
4.9
4.5 40.3 0.32
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
150 -55 150
Thermal Resistance, Junction-to-Case RthJC
3.1
Thermal Resistance, Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
Q
AC
F O
K
E
LM D
NN 123
G B
J
R
H
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
PIN CONNECTION
D
G
...
