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2N5401C Datasheet, Equivalent, PNP TRANSISTOR.EPITAXIAL PLANAR PNP TRANSISTOR EPITAXIAL PLANAR PNP TRANSISTOR |
| Part | 2N5401C |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. HIGH VOLTAGE APPLICAT ION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Le akage Current. : ICBO=-50nA(Max. ) @VCB= -120V Low Saturation Voltage : VCE(sat) =-0. 5V(Max. ) @IC=-50mA, IB=-5mA Low Noi se : NF=8dB (Max. ) MAXIMUM RATING (Ta= 25 ) CHARACTERISTIC Collector-Base Volt age Collector-Emitter Voltage Emitter-B ase Voltage Collector Current Base Curr ent Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperatur e Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg R . |
| Manufacture | KEC |
| Datasheet |
| Part | 2N5401C |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. HIGH VOLTAGE APPLICAT ION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Le akage Current. : ICBO=-50nA(Max. ) @VCB= -120V Low Saturation Voltage : VCE(sat) =-0. 5V(Max. ) @IC=-50mA, IB=-5mA Low Noi se : NF=8dB (Max. ) MAXIMUM RATING (Ta= 25 ) CHARACTERISTIC Collector-Base Volt age Collector-Emitter Voltage Emitter-B ase Voltage Collector Current Base Curr ent Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperatur e Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg R . |
| Manufacture | KEC |
| Datasheet |
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