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2N5401C Datasheet, Equivalent, PNP TRANSISTOR.

EPITAXIAL PLANAR PNP TRANSISTOR

EPITAXIAL PLANAR PNP TRANSISTOR

 

 

 

Part 2N5401C
Description EPITAXIAL PLANAR PNP TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
HIGH VOLTAGE APPLICAT ION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Le akage Current.
: ICBO=-50nA(Max.
) @VCB= -120V Low Saturation Voltage : VCE(sat) =-0.
5V(Max.
) @IC=-50mA, IB=-5mA Low Noi se : NF=8dB (Max.
) MAXIMUM RATING (Ta= 25 ) CHARACTERISTIC Collector-Base Volt age Collector-Emitter Voltage Emitter-B ase Voltage Collector Current Base Curr ent Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperatur e Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg R .
Manufacture KEC
Datasheet
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Part 2N5401C
Description EPITAXIAL PLANAR PNP TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
HIGH VOLTAGE APPLICAT ION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Le akage Current.
: ICBO=-50nA(Max.
) @VCB= -120V Low Saturation Voltage : VCE(sat) =-0.
5V(Max.
) @IC=-50mA, IB=-5mA Low Noi se : NF=8dB (Max.
) MAXIMUM RATING (Ta= 25 ) CHARACTERISTIC Collector-Base Volt age Collector-Emitter Voltage Emitter-B ase Voltage Collector Current Base Curr ent Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperatur e Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg R .
Manufacture KEC
Datasheet
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2N5401C

2N5401C
2N5401C

2N5401C

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