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2N5551 Datasheet, Equivalent, NPN TRANSISTOR.

EPITAXIAL PLANAR NPN TRANSISTOR

EPITAXIAL PLANAR NPN TRANSISTOR

 

 

 

Part 2N5551
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
HIGH VOLTAGE APPLICAT ION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leak age Current.
: ICBO=50nA(Max.
), VCB=120 V Low Saturation Voltage : VCE(sat)=0.
2 V(Max.
), IC=50mA, IB=5mA Low Noise : NF =8dB (Max.
) MAXIMUM RATING (Ta=25 ) C HARACTERISTIC SYMBOL Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base C urrent Collector Power Dissipation Junc tion Temperature Storage Temperature Ra nge VCBO VCEO VEBO IC IB PC Tj Tstg R ATING 180 160 6 600 100 625 150 -55 150 UNIT V V V m .
Manufacture KEC
Datasheet
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Part 2N5551
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
HIGH VOLTAGE APPLICAT ION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leak age Current.
: ICBO=50nA(Max.
), VCB=120 V Low Saturation Voltage : VCE(sat)=0.
2 V(Max.
), IC=50mA, IB=5mA Low Noise : NF =8dB (Max.
) MAXIMUM RATING (Ta=25 ) C HARACTERISTIC SYMBOL Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base C urrent Collector Power Dissipation Junc tion Temperature Storage Temperature Ra nge VCBO VCEO VEBO IC IB PC Tj Tstg R ATING 180 160 6 600 100 625 150 -55 150 UNIT V V V m .
Manufacture KEC
Datasheet
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2N5551

2N5551
2N5551

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