| DatasheetsPDF.com |
2N5551 Datasheet, Equivalent, NPN TRANSISTOR.EPITAXIAL PLANAR NPN TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR |
| Part | 2N5551 |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. HIGH VOLTAGE APPLICAT ION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leak age Current. : ICBO=50nA(Max. ), VCB=120 V Low Saturation Voltage : VCE(sat)=0. 2 V(Max. ), IC=50mA, IB=5mA Low Noise : NF =8dB (Max. ) MAXIMUM RATING (Ta=25 ) C HARACTERISTIC SYMBOL Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base C urrent Collector Power Dissipation Junc tion Temperature Storage Temperature Ra nge VCBO VCEO VEBO IC IB PC Tj Tstg R ATING 180 160 6 600 100 625 150 -55 150 UNIT V V V m . |
| Manufacture | KEC |
| Datasheet |
| Part | 2N5551 |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. HIGH VOLTAGE APPLICAT ION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leak age Current. : ICBO=50nA(Max. ), VCB=120 V Low Saturation Voltage : VCE(sat)=0. 2 V(Max. ), IC=50mA, IB=5mA Low Noise : NF =8dB (Max. ) MAXIMUM RATING (Ta=25 ) C HARACTERISTIC SYMBOL Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base C urrent Collector Power Dissipation Junc tion Temperature Storage Temperature Ra nge VCBO VCEO VEBO IC IB PC Tj Tstg R ATING 180 160 6 600 100 625 150 -55 150 UNIT V V V m . |
| Manufacture | KEC |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |