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SLP7N65C Datasheet, Equivalent, N-Channel MOSFET.650V N-Channel MOSFET 650V N-Channel MOSFET |
| Part | SLP7N65C |
|---|---|
| Description | 650V N-Channel MOSFET |
| Feature | SLP7N65C / SLF7N65C
650V N-Channel MOSFE T
General Description
This Power MOSFE T is produced using SL semi‘s advance d planar stripe DMOS technology. This a dvanced technology has been espe cially tailored to minimize o n-state r esist ance, pr ovide superior switching perfo rmance, and withstand high ener gy puls e in the avalanche and commutation mode . These devices are well suited for hig h efficiency sw itched mode power supp lies, active power factor corr ection b ased on half br idge topology. Feature s • 7. 0A, 650V, RDS(on) = 1. 60Ω @VG S = 10 V • Low gate charge ( typical 29nC) • High ruggednes . |
| Manufacture | SL SEMI |
| Datasheet |
| Part | SLP7N65C |
|---|---|
| Description | 650V N-Channel MOSFET |
| Feature | SLP7N65C / SLF7N65C
650V N-Channel MOSFE T
General Description
This Power MOSFE T is produced using SL semi‘s advance d planar stripe DMOS technology. This a dvanced technology has been espe cially tailored to minimize o n-state r esist ance, pr ovide superior switching perfo rmance, and withstand high ener gy puls e in the avalanche and commutation mode . These devices are well suited for hig h efficiency sw itched mode power supp lies, active power factor corr ection b ased on half br idge topology. Feature s • 7. 0A, 650V, RDS(on) = 1. 60Ω @VG S = 10 V • Low gate charge ( typical 29nC) • High ruggednes . |
| Manufacture | SL SEMI |
| Datasheet |
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