SLP7N65C

SLP7N65C / SLF7N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features 7.0A, 650V, RDS(on) = 1.60Ω @VGS = 10 V Low gate charge ( typical 29nC) High ruggedness Fast wsitching 100% avalanche tested Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. SLP7N65C SLF7N65C 650 7.0 7.0* 4.2 4.2 * 28 28 * ± 30 230 14.7 4.5 147 48 1.18 0.38 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA...