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2N3904S Datasheet, Equivalent, NPN TRANSISTOR.

EPITAXIAL PLANAR NPN TRANSISTOR

EPITAXIAL PLANAR NPN TRANSISTOR

 

 

 

Part 2N3904S
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
SWITCHING APPLICATION .
FEATURES Low Leakage Current : ICEX=5 0nA(Max.
), IBL=50nA(Max.
) @VCE=30V, VEB =3V.
Excellent DC Current Gain Linearit y.
Low Saturation Voltage : VCE(sat)=0.
3V(Max.
) @IC=50mA, IB=5mA.
Low Collecto r Output Capacitance : Cob=4pF(Max.
) @V CB=5V.
Complementary to 2N3906S.
MAXIM UM RATING (Ta=25 ) CHARACTERISTIC SYM BOL RATING Collector-Base Voltage VCB O 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Col lector Current IC 200 Base Current I B 50 Collector Power Dissipation PC * 350 Junction .
Manufacture KEC
Datasheet
Download 2N3904S Datasheet
Part 2N3904S
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION.
SWITCHING APPLICATION .
FEATURES Low Leakage Current : ICEX=5 0nA(Max.
), IBL=50nA(Max.
) @VCE=30V, VEB =3V.
Excellent DC Current Gain Linearit y.
Low Saturation Voltage : VCE(sat)=0.
3V(Max.
) @IC=50mA, IB=5mA.
Low Collecto r Output Capacitance : Cob=4pF(Max.
) @V CB=5V.
Complementary to 2N3906S.
MAXIM UM RATING (Ta=25 ) CHARACTERISTIC SYM BOL RATING Collector-Base Voltage VCB O 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Col lector Current IC 200 Base Current I B 50 Collector Power Dissipation PC * 350 Junction .
Manufacture KEC
Datasheet
Download 2N3904S Datasheet

2N3904S

2N3904S
2N3904S

2N3904S

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