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2N3904S Datasheet, Equivalent, NPN TRANSISTOR.EPITAXIAL PLANAR NPN TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR |
| Part | 2N3904S |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . FEATURES Low Leakage Current : ICEX=5 0nA(Max. ), IBL=50nA(Max. ) @VCE=30V, VEB =3V. Excellent DC Current Gain Linearit y. Low Saturation Voltage : VCE(sat)=0. 3V(Max. ) @IC=50mA, IB=5mA. Low Collecto r Output Capacitance : Cob=4pF(Max. ) @V CB=5V. Complementary to 2N3906S. MAXIM UM RATING (Ta=25 ) CHARACTERISTIC SYM BOL RATING Collector-Base Voltage VCB O 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Col lector Current IC 200 Base Current I B 50 Collector Power Dissipation PC * 350 Junction . |
| Manufacture | KEC |
| Datasheet |
| Part | 2N3904S |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . FEATURES Low Leakage Current : ICEX=5 0nA(Max. ), IBL=50nA(Max. ) @VCE=30V, VEB =3V. Excellent DC Current Gain Linearit y. Low Saturation Voltage : VCE(sat)=0. 3V(Max. ) @IC=50mA, IB=5mA. Low Collecto r Output Capacitance : Cob=4pF(Max. ) @V CB=5V. Complementary to 2N3906S. MAXIM UM RATING (Ta=25 ) CHARACTERISTIC SYM BOL RATING Collector-Base Voltage VCB O 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Col lector Current IC 200 Base Current I B 50 Collector Power Dissipation PC * 350 Junction . |
| Manufacture | KEC |
| Datasheet |
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