2N5401S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -160 Collector-Emitter Voltage VCEO -150 Emitter-Base Voltage VEBO -5 Collector Current IC -600 Base Current IB -100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking ZEType Name Lot No. 1999. 12. 22 Revision No : 2 1/2 2N5401S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current ICBO IEBO TEST CONDITION VCB=-120V, IE=0 VCB=-120V, IE=0, Ta=100 VEB=-3V, IC=0 Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 DC Current Gain * Collector-Emit...