Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
180
Collector-Emitter Voltage
VCEO
160
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V mA mA mW
2N5551S
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Marking
ZFType Name
Lot No.
2016. 03. 28
Revision No : 3
1/3
2N5551S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
TEST CONDITION VCB=120V, IE=0 VCB=120V, IE=0, Ta=100 VEB=4V, IC=0
Collector-Base Breakdown Voltage
V(BR)CBO IC=0.1mA, IE=0
Collector-Emitter Breakdown Voltage
* V(BR)CEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10 , IC=0
DC Current Gain
*
Collector-Emitter Saturation Voltage
*
Base-Emitter Saturation Voltage
Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain
*
Noise Figure
hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2
fT Cob Cib hfe
NF
* Pulse Test : Pulse Width 300 , Duty Cycle 2%.
VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=250 Rg=1k , f=10Hz 15.7kHz
MIN. -
TYP. -
MAX. 50 50 50
UNIT nA
nA
180 - - V
160 - - V
6- -V
80 -
-
80 - 250 -
30 -
-
- - 0.15 V
- - 0.2
- - 1.0 V
- - 1.0
100 - 300 MHz
- - 6 pF
- - 20 pF
50 - 200 -
- - 8 dB
2016. 03. 28
Revision No : 3
2/3
COLLECTOR CURRENT I C (mA)
2N5551S
I C - VCE
140 Ta=25 C
120 IB =10mA
100 IB =6mA
80 IB =4mA
60 IB =2mA
40 IB =0.5mA
20
0 01 2 3 4 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN h FE
h FE - I C
1K
Ta=125 C
VCE = 5V
100 Ta=-25 C
10
Ta=25 C
1 0.01 0.1 1 10 100 1000
COLLECTOR CURRENT I C (mA)
VBE(sat) - I C
10 IC /I B=10
Ta=-25 C 1
Ta=125 C
Ta=25 C
0.1 0.01
0.1 1
10 100
COLLECTOR CURRENT IC (mA)
1K
COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat) (V)
1 IC /I B=10
0.5 0.3
0.1 0.05 0.03
VCE(sat) - I C
Ta=125 C Ta=25 C
Ta=-25 C
0.01 0.01
0.1 1
10 100
COLLECTOR CURRENT I C (mA)
1K
COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat) (V)
SAFE OPERATING AREA
10
COLLECTOR CURRENT I C (A)
I C MAX.(PULSED) * 1 CONTINUOUS
0.1 0.01 0.001
* SPILNUGSLEETNa=O2N5DRCCEOPPEETRIATTIIVONE*1T0am=*S215mSC CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
0.1 1 10
100
VCEO MAX
500
COLLECTOR-EMITTER VOLTAGE VCE (V)
2016. 03. 28
Revision No : 3
3/3
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