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2N5551S Dataheets PDF



Part Number 2N5551S
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet 2N5551S Datasheet2N5551S Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collec.

  2N5551S   2N5551S


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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking ZFType Name Lot No. 2016. 03. 28 Revision No : 3 1/3 2N5551S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO TEST CONDITION VCB=120V, IE=0 VCB=120V, IE=0, Ta=100 VEB=4V, IC=0 Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=10 , IC=0 DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain * Noise Figure hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hfe NF * Pulse Test : Pulse Width 300 , Duty Cycle 2%. VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=250 Rg=1k , f=10Hz 15.7kHz MIN. - TYP. - MAX. 50 50 50 UNIT nA nA 180 - - V 160 - - V 6- -V 80 - - 80 - 250 - 30 - - - - 0.15 V - - 0.2 - - 1.0 V - - 1.0 100 - 300 MHz - - 6 pF - - 20 pF 50 - 200 - - - 8 dB 2016. 03. 28 Revision No : 3 2/3 COLLECTOR CURRENT I C (mA) 2N5551S I C - VCE 140 Ta=25 C 120 IB =10mA 100 IB =6mA 80 IB =4mA 60 IB =2mA 40 IB =0.5mA 20 0 01 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN h FE h FE - I C 1K Ta=125 C VCE = 5V 100 Ta=-25 C 10 Ta=25 C 1 0.01 0.1 1 10 100 1000 COLLECTOR CURRENT I C (mA) VBE(sat) - I C 10 IC /I B=10 Ta=-25 C 1 Ta=125 C Ta=25 C 0.1 0.01 0.1 1 10 100 COLLECTOR CURRENT IC (mA) 1K COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat) (V) 1 IC /I B=10 0.5 0.3 0.1 0.05 0.03 VCE(sat) - I C Ta=125 C Ta=25 C Ta=-25 C 0.01 0.01 0.1 1 10 100 COLLECTOR CURRENT I C (mA) 1K COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat) (V) SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) I C MAX.(PULSED) * 1 CONTINUOUS 0.1 0.01 0.001 * SPILNUGSLEETNa=O2N5DRCCEOPPEETRIATTIIVONE*1T0am=*S215mSC CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 1 10 100 VCEO MAX 500 COLLECTOR-EMITTER VOLTAGE VCE (V) 2016. 03. 28 Revision No : 3 3/3 .


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