BC858W

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES For Complementary With NPN Type BC846W/847W/848W. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL BC856W Collector-Base Voltage BC857W BC858W VCBO Collector-Emitter Voltage BC856W BC857W BC858W VCEO BC856W Emitter-Base Voltage BC857W BC858W VEBO Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range IC IE PC Tj Tstg RATING -80 -50 -30 -65 -45 -30 -5 -5 -5 -100 100 100 150 -55 150 UNIT V V V mA mA mW BC856W/7W/8W EPITAXIAL PLANAR PNP TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking Type Name Lot No. MARK SPEC TYPE BC856W-A MARK 3A BC856W-B 3B BC857W-A 3E BC857W-B 3F BC857W-C 3G BC858W-A 3J BC858W-B 3K BC858W-C 3L 2008. 8. 29 Revision No : 4 1/3 BC856W/7W/8W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current DC Current Gain (Note) BC856W BC857W BC858W Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance ICBO hFE VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 VBE(ON1) VBE(ON2) fT Cob Noise Figure NF TEST CONDITION VCB=-30V, IE=0 ...