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KN2907S Datasheet, Equivalent, PNP TRANSISTOR.EPITAXIAL PLANAR PNP TRANSISTOR EPITAXIAL PLANAR PNP TRANSISTOR |
| Part | KN2907S |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . FEATURES Low Leakage Current : ICEX=- 50nA(Max. ) ; VCE=-30V, VEB=-0. 5V. Low S aturation Voltage : VCE(sat)=-0. 4V(Max. ) ; IC=150mA, IB=-15mA. Complementary t o the KN2222S/2222AS. MAXIMUM RATING ( Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Bas e Voltage VCBO -60 V Collector-Emit ter Voltage VCEO -40 -60 V Emitter- Base Voltage VEBO -5 V Collector Cu rrent IC -600 mA Collector Power Diss ipation (Ta=25 ) PC PC * 150 mW 350 Junction Temperature Tj 150 Storage Te mperature Rang . |
| Manufacture | KEC |
| Datasheet |
| Part | KN2907S |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . FEATURES Low Leakage Current : ICEX=- 50nA(Max. ) ; VCE=-30V, VEB=-0. 5V. Low S aturation Voltage : VCE(sat)=-0. 4V(Max. ) ; IC=150mA, IB=-15mA. Complementary t o the KN2222S/2222AS. MAXIMUM RATING ( Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Bas e Voltage VCBO -60 V Collector-Emit ter Voltage VCEO -40 -60 V Emitter- Base Voltage VEBO -5 V Collector Cu rrent IC -600 mA Collector Power Diss ipation (Ta=25 ) PC PC * 150 mW 350 Junction Temperature Tj 150 Storage Te mperature Rang . |
| Manufacture | KEC |
| Datasheet |
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