SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTI...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. DARLINGTON
TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collertor Current
VCBO VCES VEBO
IC
30 30 10 500
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V V V mA mW
MMBTA13/14
EPITAXIAL PLANAR
NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Emitter Cut-off Current
MMBTA13
DC Current Gain
MMBTA14 MMBTA13
VCES ICBO IEBO
hFE *
MMBTA14
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Current Gain Bandwith Product
fT
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
TEST CONDITION IC=0.1mA VCB=30V VEB=10V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V
MIN. 30 -
5,000 10,000 10,000 20,000
125
TYP. -
MAX. -
100 100
1.5 2.0 -
UNIT V nA nA
-
V V MHz
MARK SPEC
TYPE MARK
MMBTA13 AIX
MMBTA14 AHX
Marking
A XType Name
Lot No.
1999. 11. 30
Revision No : 4
1/2
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