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MMBTA64 Dataheets PDF



Part Number MMBTA64
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet MMBTA64 DatasheetMMBTA64 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage MMBTA63/64 VCBO MMBTA63/64 VCES -30 -30 Emitter-Base Voltage Collector Current DC Pulse VEBO IC ICP -10 -500 -1 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA A mW MMBTA63/64 EPI.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage MMBTA63/64 VCBO MMBTA63/64 VCES -30 -30 Emitter-Base Voltage Collector Current DC Pulse VEBO IC ICP -10 -500 -1 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA A mW MMBTA63/64 EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current V(BR)CES ICBO IEBO IC=-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Current Gain Bandwith Product MMBTA63/64 fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, f=100MHz VCE=-5V MARK SPEC TYPE MARK MMBTA63 AGX MMBTA64 AFX Marking A XType Name MIN. -30 5,000 10,000 10,000 20,000 - TYP. - - MAX. - -0.1 -0.1 - -1.5 UNIT V A A V - - -2.0 V 125 - - MHz Lot No. 2008. 8. 29 Revision No : 5 1/2 DC CURRENT GAIN hFE MMBTA63/64 1M 300k 100k 30k 10k 3k 1k -1 h FE - I C VCE =-5V -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1k CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) 1k 300 100 30 10 3 1 -1 fT - IC VCE =-5V -3 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1k -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 VBE(sat) , VCE(sat) - I C I C =1000I B VBE(sat) V CE(sat) -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1k COLLECTOR CURRENT I C (mA) I C - VBE -200 -100 VCE =-5V -30 -10 -3 -1 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 BASE-EMITTER VOLTAGE VBE (V) SATURATION VOLTAGE VBE(sat) , VCE(sat) (V) 2008. 8. 29 Revision No : 5 2/2 .


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