KTX312T

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Including two(TR, Diode) devices in TSV. (Thin Super Mini type with 5 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process. KTX312T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE EQUIVALENT CIRCUIT (TOP VIEW) MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 ) SYMBOL VCBO VCEO VEBO IC ICP PC * Tj Tstg DIODE D1 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge current Junction Temperature Storage Temperature 2003. 3. 11 Revision No : 1 SYMBOL VRRM VR IO IFSM Tj Tstg RATING -20 -20 -5 -1.5 -3 0.9 150 -55~125 RATING 25 20 1.0 3 125 -55~125 UNIT V V V A A W UNIT V V A A 1/4 KTX312T ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob VCB=-12V, IE=0 VEB=-4V...