Part Number |
KTX312T |
Manufacturers |
KEC |
Logo |
|
Description |
EPITAXIAL PLANAR PNP TRANSISTOR |
Datasheet |
KTX312T Datasheet (PDF) |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Including two(TR, Diode) devices in TSV. (Thin Super Mini type with 5 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
KTX312T
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
EQUIVALENT CIRCUIT (TOP VIEW)
MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600
0.8 )
SYMBOL VCBO VCEO VEBO IC ICP PC * Tj Tstg
DIODE D1 CHARACTERISTIC
Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge current Junction Temperature Storage Temperature
2003. 3. 11
Revision No : 1
SYMBOL VRRM VR IO IFSM Tj Tstg
RATING -20 -20 -5 -1.5 -3 0.9 150
-55~125
RATING 25 20 1.0 3 125
-55~125
UNIT V V V.