Part Number |
KTX412T |
Manufacturers |
KEC |
Logo |
|
Description |
EPITAXIAL PLANAR NPN TRANSISTOR |
Datasheet |
KTX412T Datasheet (PDF) |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Including two(TR, Diode) devices in TSV. (Thin Super Mini type with 5 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking 5
4
D1 Q1
CNType Name
Lot No.
12 3
1 23
A F GG
KTX412T
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
C L
E
B 15 2 34
D
DIM A B
C D E F G H I J K L
MILLIMETERS 2.9+_ 0.2
1.6+0.2/-0.1 0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3 1.9+_ 0.2 0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15 0.60 0.55
I
H JJ
1. D 1 ANODE 2. Q 1 BASE 3. Q 1 EMITTER 4. Q 1 COLLECTOR 5. D 1 CATHODE
TSV
MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600
0.8 )
SYMBOL VCBO VCEO VEBO IC.