KTX321U

SEMICONDUCTOR TECHNICAL DATA POWER MANAGEMENT. FEATURES Including two devices in US6. (Ultra Super mini type with 6 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT (TOP VIEW) 65 4 MARKING 654 Q2 Type Name BRQ1 Lot No. 12 3 123 THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR A A1 CC H B B1 1 6 DIM MILLIMETERS A 2.00+_ 0.20 2 5 A1 1.3+_ 0.1 B 2.1+_ 0.1 3 4 D B1 1.25+_ 0.1 C 0.65 D 0.2+0.10/-0.05 G 0-0.1 H 0.9+_ 0.1 T T 0.15+0.1/-0.05 G 1. Q1 EMITTER 2. Q1 BASE 3. Q2 DRAIN 4. Q2 SOURCE 5. Q2 GATE 6. Q1 COLLECTOR US6 Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP * PC * Tj Tstg * Single Pulse PW=1mS. ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land. RATING -15 -12 -6 -500 -1 150 150 -55 150 Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDS VGSS ID PC ** Tch Tstg ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land. RATING 30 20 100 150 150 -55 150 2008. 9. 23 Revision No : 1 UNIT V V V mA A mW UN...