Document
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON APPLICATION.
FEATURES Complementary to KTD1510 Recommended for 60W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING -160 -150 -5 -10 -1 100 150
-55 150
UNIT V V V A A W
E
KTB2510
EPITAXIAL PLANAR PNP TRANSISTOR
AQ
B K
F I
J GH
C
D d
PP
1 23 1. BASE
L
DIM MILLIMETERS
A 15.9 MAX
B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
H 9.0
I 4.5
T MJ
2.0
K 1.8 MAX L 20.5+_ 0.5
M 2.8
P 5.45+_ 0.2
Q Φ3.2+_ 0.2
T 0.6+0.3/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
EQUIVALENT CIRCUIT
EMITTER 70Ω
BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
TEST CONDITION VCB=-160V, IE=0 VEB=-5V, IC=0 IC=-30mA, IB=0 VCE=-4V, IC=-7A IC=-7A, IB=-7mA IC=-7A, IB=-7mA VCE=-12V, IC=-2A VCB=-10V, IE=0, f=1MHz
COLLECTOR
MIN. -
-150 5000
-
TYP. -
12000 50
230
MAX. -100 -100
20000 -2.5 -3.0
-
UNIT A A V
V V MHz pF
2008. 4. 18
Revision No : 2
1/3
KTB2510
2008. 4. 18
Revision No : 2
2/3
KTB2510
2008. 4. 18
Revision No : 2
3/3
.