KTA1715

SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1 S(Typ.) Complementary to KTC2814. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING -50 -50 -5 -2 1.5 10 150 -55 150 UNIT V V V A W KTA1715 EPITAXIAL PLANAR PNP TRANSISTOR A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A IC=-1A, IB=-0.05A IC=-1A, IB=-0.05A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz Switching Time Turn On Time Storage Time ton 20µs OUTPUT 30Ω IB2 INPUT tstg IB1 IB2 IB1 Fall Time tf Note : hFE(1) ...