SEMICONDUCTOR
TECHNICAL DATA
KTA1718D/L
EPITAXIAL PLANAR PNP TRANSISTOR
POWER AMPLIFIER APPLICATION. POWER SWITCHING A...
SEMICONDUCTOR
TECHNICAL DATA
KTA1718D/L
EPITAXIAL PLANAR
PNP TRANSISTOR
POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1 S(Typ.) Complementary to KTC2815D/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCBO VCEO VEBO
IC
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -50 -50 -5 -2 1.0 10 150
-55 150
UNIT V V V A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2 E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
SYMBOL
ICBO IEBO V(BR)CEO hFE(1) (Note) hFE2 VCE(sat) VBE(sat)...