SEMICONDUCTOR
TECHNICAL DATA
KTA1862D/L
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING...
SEMICONDUCTOR
TECHNICAL DATA
KTA1862D/L
EPITAXIAL PLANAR
PNP TRANSISTOR
HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically : tf= 0.4 S at IC=-1A Wide Safe Operating Area (SOA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
DC Pulse
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP
PC
Tj Tstg
RATING -400 -400 -7 -2.0 -4.0 1.0 10 150
-55 150
UNIT V V V
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30 +_ 0.1
1.00 MAX 2.30 +_ 0.2 0.5 +_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2 E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter S...