KTC3209

SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1281. KTC3209 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 50 50 5 2 -2 1 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=50V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=100mA, IB=0 DC Current Gain hFE (1) (Note) VCE=2V, IC=0.5A (Note) hFE (2) (Note) VCE=2V, IC=1.5A Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.05A Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.05A Transition Frequency fT VCE=2V, IC=0.5A Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Turn-on Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE Classification 0:70 140, Y:120 240 2005. 12. 2 Revision No : 1 MIN. 50 5 70 40 - TYP. - 100 30 MAX. 0.1 0.1 240 0.5 1.2 - UNIT A A V V V V MHz pF - 0.1 - - 1.0 - S - 0.1 - 1/3 KTC3209 2005. 12. 2 Revision No : 1 2/3...