KTC5103D

SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.3W(Ta=25 ) Complementary to KTA1385D KTC5103D EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * VCBO VCEO VEBO IC ICP Base Current IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING 60 60 7 5 8 1 1.0 15 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * ICBO IEBO hFE(1) hFE(2) (Note) hFE(3) VCE(sat) VBE(sat) VCB=50V, IE=0 VEB=7V, IC=0 VCE=1V, IC=0.1A VCE=1V, IC=2A VCE=2V, IC=5A IC=2A, IB=0.2A IC=2A, IB=0.2A Turn On Time ton Switching Time Storage Time tstg Fall Time tf * Pulse test : PW 50 S, Duty Cycle 2% Pulse Note) hFE(2) Classification : O:160 320, Y:200 400. 2013. 6. 26 Revision No : 4 MIN. 60 160 50 - - TYP. 0.1 0.9 0.2 MAX. 10 10 400 0.3 1.2 UNIT A A V V 1 - 1.1 2.5 S - 0.2 1 1/3 KTC5103D 2013. 6. 26 Revision No : 4 2/3 KTC5103D 2013. 6. 26 Revision No : 4 3/3 ...