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2N3906SC Datasheet, Equivalent, PNP TRANSISTOR.EPITAXIAL PLANAR PNP TRANSISTOR EPITAXIAL PLANAR PNP TRANSISTOR |
| Part | 2N3906SC |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . 2N3906SC EPITAXIAL PLANAR PNP TRANSI STOR FEATURES Low Leakage Current : IC EX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-3 0V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE (sat)=-0. 4V(Max. ) @IC=-50mA, IB=-5mA. C omplementary to 2N3904SC. MAXIMUM RATI NG (Ta=25 ) CHARACTERISTIC SYMBOL RAT ING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collect or Current IC -200 Base Current IB - 50 Collector Power Dissipation PC * 3 50 Junction T . |
| Manufacture | KEC |
| Datasheet |
| Part | 2N3906SC |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . 2N3906SC EPITAXIAL PLANAR PNP TRANSI STOR FEATURES Low Leakage Current : IC EX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-3 0V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE (sat)=-0. 4V(Max. ) @IC=-50mA, IB=-5mA. C omplementary to 2N3904SC. MAXIMUM RATI NG (Ta=25 ) CHARACTERISTIC SYMBOL RAT ING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collect or Current IC -200 Base Current IB - 50 Collector Power Dissipation PC * 3 50 Junction T . |
| Manufacture | KEC |
| Datasheet |
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