2N3906SC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3906SC EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Base Current IB -50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2015. 5. 12 Revision No : 0 1/3 2N3906SC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICEX VCE=-30V, VEB=-3V Collector Cut-off Current ICBO VCB=-30V, IE=0 Emitter Cut-off Current IEBO VEB=-3V, IC=0 Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 Emitter-Base Breakdown Voltage * V(BR)EBO IE=-10 A, IC=0 DC Current Gain * hFE VCE=-1V, IC=-10mA Collector-Emitter Saturation Voltage * VCE(sat) IC=-50mA, IB=-5mA Base-Emitter Saturation Voltage * VBE(sat) IC=-50mA, IB=-5mA Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz Delay Time td Switching Time Rise Time Storage Time tr tstg Fall Time tf * Pulse Te...