BC817W

Elektronische Bauelemente RoHS Compliant Product BC817W NPN Transistor Epitaxial Planar Transistor Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * For General AF Appliacations * High Collector Current * High Current Gain * Low Collector-Emitter Saturation Voltage ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Value 50 45 5 800 225 -55~+150 Units V V V mA mW CO ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specifie Parameter Symbol Min Typ. Max Unit Test Conditions Collector-Base Breakdown Voltage BVCBO 50 - - V IC= 100 µA Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC= 10mA Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC= 100 µA Emitter-Base Breakdown Voltage BVEBO 5 - - V IE= 100 µA Collector-Base Cutoff Current ICES - - 100 nA VCE= 25V Emitter-Base Cutoff Current IEBO - - 100 nA VEB=4V Collector Saturation Voltage *VCE(sat) - - 700 mV IC=500mA,IB=50mA Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capaci...