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KTA1042L Dataheets PDF



Part Number KTA1042L
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA1042L DatasheetKTA1042L Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTC2022D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -5 -0.5 20 150 -55 150 UNIT V V V A A W Q KTA1042D.

  KTA1042L   KTA1042L



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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTC2022D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -5 -0.5 20 150 -55 150 UNIT V V V A A W Q KTA1042D/L EPITAXIAL PLANAR PNP TRANSISTOR A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1 1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10 0.95 MAX DPAK Q AI CJ BD H G FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0+_ 0.2 P D 1.10+_ 0.2 E 9.50+_ 0.6 F 2.30+_ 0.1 G 0.76+_ 0.1 H 1.0 MAX I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1 P 1.0 +_0.1 Q 0.90 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:70~140, ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob Y:120~240. VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-4A, IB=-0.4A VCE=-5V, IC=-4A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz IPAK MIN. - -100 70 20 - TYP. 30 270 MAX. -100 -1 240 -2.0 -1.5 - UNIT A mA V V V MHz pF 2003. 3. 27 Revision No : 3 1/2 COLLECTOR CURRENT IC (A) KTA1042D/L -5 -250 -4 I C - VCE -200 -150 -100 -3 -50 -2 IB =-20mA -1 COMMON EMITTER Tc=25 C 0 0 0 -1 -2 -3 -4 -5 -6 -7 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 2 COMMON EMITTER 1 IC /IB =10 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 Tc=75 C Tc=25 C Tc=-25 C -0.03 -0.1 -0.3 -1 COLLECTOR CURRENT IC (A) -3 -5 DC CURRENT GAIN hFE hFE - IC 500 300 Tc=75 C Tc=25 C 100 Tc=-25 C 50 30 COMMON EMITTER VCE =-5V 10 -0.01 -0.03 -0.1 -0.3 -1 COLLECTOR CURRENT I C (A) -3 -5 COLLECTOR POWER DISSIPATION PC (W) 24 20 1 Pc - Ta 1 Tc=25 C 2 Ta=25 C 16 12 8 4 2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 3 COLLECTOR CURRENT IC (A) SAFE OPERATING AREA 1m10s1m0*0sm*s * -20 I C MAX(PULSED) * -10 I C MAX (CONTINUOUS) -5 -3 -1 1s DCTcO=P2E5RCATION * -0.5 * SINGLE NONREPETITIVE -0.3 PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 -3 -10 -30 VCEO MAX. -100 -200 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2 .


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