Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTC2022D/L.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING -100 -100 -5 -5 -0.5 20 150
-55 150
UNIT V V V A A W
Q
KTA1042D/L
EPITAXIAL PLANAR PNP TRANSISTOR
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2 E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:70~140,
ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob Y:120~240.
VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-4A, IB=-0.4A VCE=-5V, IC=-4A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz
IPAK
MIN. -
-100 70 20 -
TYP. 30
270
MAX. -100 -1
240
-2.0 -1.5
-
UNIT A
mA V
V V MHz pF
2003. 3. 27
Revision No : 3
1/2
COLLECTOR CURRENT IC (A)
KTA1042D/L
-5 -250
-4
I C - VCE
-200 -150
-100
-3 -50
-2 IB =-20mA
-1 COMMON EMITTER
Tc=25 C 0
0
0 -1 -2 -3 -4 -5 -6 -7
COLLECTOR EMITTER VOLTAGE V CE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
VCE(sat) - I C
2 COMMON EMITTER
1 IC /IB =10
-0.5 -0.3
-0.1 -0.05 -0.03
-0.01
Tc=75 C
Tc=25 C Tc=-25 C
-0.03 -0.1 -0.3
-1
COLLECTOR CURRENT IC (A)
-3 -5
DC CURRENT GAIN hFE
hFE - IC
500
300 Tc=75 C
Tc=25 C 100
Tc=-25 C 50
30 COMMON EMITTER VCE =-5V
10 -0.01 -0.03 -0.1 -0.3 -1
COLLECTOR CURRENT I C (A)
-3 -5
COLLECTOR POWER DISSIPATION PC (W)
24 20 1
Pc - Ta
1 Tc=25 C 2 Ta=25 C
16
12
8
4
2
0
0
25 50
75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27
Revision No : 3
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
1m10s1m0*0sm*s *
-20
I C MAX(PULSED) * -10
I C MAX (CONTINUOUS) -5
-3 -1
1s DCTcO=P2E5RCATION
*
-0.5 * SINGLE NONREPETITIVE
-0.3 PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
-3 -10
-30
VCEO MAX.
-100 -200
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
.