KTA1050

SEMICONDUCTOR TECHNICAL DATA KTA1050 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -5 -0.5 30 150 -55 150 UNIT V V V A A W Q K A E LM D NN 123 G B J F O C R H DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 TO-220IS (1) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-4A, IB=-0.4A VCE=-5V, IC=-4A VCE=-5V, IC=-1A Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note : hFE(1) Classification O:70 140 , Y:120 240 2014. 3. 20 Revision No : 0 MIN. - -100 70 20 - TYP. 30 90 MAX. -100 -1 240 -2.0 -1.5 - UNIT A mA V V V MHz pF 1/2 COLLECTOR CURRENT IC (A) KTA105...