KTA1266

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198. KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB -50 -50 -5 -150 -50 Collector Power Dissipation 625 *PC 400 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW UNIT V V V mA mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Base Intrinsic Resistance ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob rbb’ VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCB=-10V, IE=1mA, f=30MHz Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10k , f=1kHz Note : hFE(1) Classification O:70 140, Y:120 240, GR:200 400 MIN. 70 25 80 - TYP. - -0.1 4.0 30 1.0 MAX. -0.1 -0.1 400 -0.3 -1.1 7.0 10 UNIT A A V V MHz pF dB 2013. 7. 08 Revision No : 4 1/2 KTA1266 2013. 7. 08 Revision No : 4 2/2 ...