KTA1270

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. KTA1270 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING -35 -30 -5 -500 -100 625 150 -55 150 UNIT V V V mA mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE(1) (Note) hFE(2) (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE(1) Classification 0:70 140, Y:120 240 hFE(2) Classification 0:25Min., Y:40Min. TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz MIN. 70 25 - TYP. - -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 - UNIT A A V V MHz pF 2012. 6. 8 Revision No : 2 1/2 KTA1270 2012. 6. 8 Revision No : 2 2/2 ...