KTA1296

SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES Low Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-2A Complementary to KTC3266. KTA1296 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -20 -20 -6 -2 -0.5 625 150 -55 150 UNIT V V V A A mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE(1) (Note) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE(1) Classification Y:120 240, GR:200 400 TEST CONDITION VCB=-20V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-0.1A VCE=-2V, IC=-2A IC=-2A, IB=-0.1A VCE=-2V, IC=-0.1A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. - 120 40 - TYP. - 120 40 MAX. -0.1 -0.1 400 -0.5 -0.85 - UNIT A A V V MHz pF 2000. 11. 30 Revision No : 0 1/2 KTA1296 Ta=25 C Ta=-25 C 2000. 11. 30 Revision No : 0 2/2 ...