KTA1659

SEMICONDUCTOR TECHNICAL DATA KTA1659/A EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC4370/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTA1659 KTA1659A Collector-Emitter Voltage KTA1659 KTA1659A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -160 -180 -160 -180 -5 -1.5 -0.15 20 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current ICBO IEBO Collector-Emitter Breakdown Voltage KTA1659 KTA1659A V(BR)CEO DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage hFE (Note) VCE(sat) VBE Transition Frequency fT Collector Output Capacitance Note : hFE Classification O:70~140, Cob Y:120~240 TEST CONDITION VCB=-160V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-100mA VCB=-10V, IE=0, f=1MHz MIN. - -160 -180 70 - ...