CNB1303

Reflective Photosensors (Photo Reflectors) 2.0±0.2,,, CNB1303 Reflective Photosensor Overview CNB1303 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. Features Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) Easy interface for control circuit Applications Control of motor and other rotary units Detection of position and edge Detection of paper, film and cloth Start, end mark detection of magnetic tape 9.0±1.0 2.7±0.2 9.0±1.0 0.4 Mark for indicating emitter side C0.5 13 Chip center 2.0±0.2 Unit : mm 4-0.7 4-0.5 ±0.1 24 1.8 3.4±0.3 0.5 0.15 1.5±0.2 3 41 2 Pin connection Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Reverse voltage (DC) VR 3 V Input (Light Forward current (DC) emitting diode) IF 50 mA Power dissipation PD*1 75 mW Collector current IC 20 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation VCEO VECO PC*2 30 5 50 V V mW Temperature Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit ...