KTB1241

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -80 -5 -1 1 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 H K L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter-Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT VCB=-60V, IE=0 VEB=-4V, IC=0 IC=-1mA, IB=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note : hFE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400 MIN. - -80 70 - TYP. - 100 25 MAX. -1 -1 400 -0.4 - UNIT ỌA ỌA V V MHz pF 1998. 8. 21 Revision No : 1 1/2 KTB1241 COLLECTOR CURRENT...