KTB1367

SEMICONDUCTOR TECHNICAL DATA KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -5 -0.5 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-100V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 DC Current Gain hFE(1) (Note) hFE(2) VCE=-5V, IC=-1A VCE=-5V, IC=-4A Collector-Emitter Saturation Voltage VCE(sat) IC=-4A, IB=-0.4A Base-Emitter Voltage VBE VCE=-5V, IC=-4A Transition Frequency fT VCE=-5V, IC=-1A Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240 MIN. - -100 40 20 - TYP. 5.0 270 MAX. -10...