KTB688

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD718. Recommended for 45 50W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -120 -120 -5 -10 -1 80 150 -55 150 UNIT V V V A A W E KTB688 TRIPLE DIFFUSED PNP TRANSISTOR AQ B K F I J GH C D d PP L T 1 23 1. BASE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.9 MAX B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3 d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX H 9.0 I 4.5 MJ 2.0 K 1.8 MAX L 20.5+_ 0.5 M 2.8 P 5.45+_ 0.2 Q Φ3.2+_ 0.2 T 0.6+0.3/-0.1 TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification R:55 110, O:80 160 TEST CONDITION VCB=-120V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-1A IC=-5A, IB=-0.5A VCE=-5V, IC=-5A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz MIN. - -120 55 - TYP. 10 280 MAX. -10 -10 160 -2.5 -1.5 - UNIT A A V V V MHz pF 1997. 1. 25 Revision No : 0 1/2 KTB688 COLLECTOR CURRENT IC (A) -400mA IC...