KTB764

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE FEATURES High Voltage : VCEO=-50V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to KTD863. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -60 -50 -5 -1 -2 1 150 -55 150 UNIT V V V A W O D KTB764 TRIPLE DIFFUSED PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 K H L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Collector Cut-off Current ICEO Emitter Cut-off Current IEBO DC Current Gain hFE(1) hFE(2) Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency V(BR)CEO VCE(sat) VBE(sat) fT Collector Output Capacitance Cob TEST CONDITION VCB=-50V, IE=0 VCE=-50V, IB=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-1mA, IB=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz ...