SEMICONDUCTOR
TECHNICAL DATA
KTC1003
EPITAXIAL PLANAR NPN TRANSISTOR
B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION.
...
SEMICONDUCTOR
TECHNICAL DATA
KTC1003
EPITAXIAL PLANAR
NPN TRANSISTOR
B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION.
FEATURES Large Collector Current Capability. Large Collector Power Dissipation Capability.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Base Current Collector Power Dissipation
(Tc=25 ) Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
RATING 200 60 5 4 10 1
30
150 -55 150
UNIT V V V
A
A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat)
Transition Frequency
fT
TEST CONDITION VCB=170V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=0.4A IC=4A, IB=0.4A VCE=5V, IC=0.5A
MIN. 30 20 -
TYP. 40 8.0
MAX. 10 10 150 1.0 1.5 -
UNIT A A
V V MHz
2007. 5. 21
Revision No : 1
1/2
COLLECTOR CURRENT I C (A)
KTC1003
I C - VCE
5 COMMON EMITTER
4 400 300 200 150 Tc=25 C 100
3 50
2 I B =20mA
1...