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KTC2022D Datasheet, Equivalent, NPN TRANSISTOR.EPITAXIAL PLANAR NPN TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR |
| Part | KTC2022D |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
GENER AL PURPOSE APPLICATION. FEATURES Low C ollector-Emitter Saturation Voltage : V CE(sat)=-2. 0V(Max. ). MAXIMUM RATING (T a=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitte r Voltage Emitter-Base Voltage Collecto r Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperatu re Storage Temperature Range VCBO VCEO VCES VEBO IC ICP IB PC Tj Tstg 130 10 0 130 8 5 10 0. 5 20 150 -55 150 UNIT V V V V A A A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM . |
| Manufacture | KEC |
| Datasheet |
| Part | KTC2022D |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
GENER AL PURPOSE APPLICATION. FEATURES Low C ollector-Emitter Saturation Voltage : V CE(sat)=-2. 0V(Max. ). MAXIMUM RATING (T a=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitte r Voltage Emitter-Base Voltage Collecto r Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperatu re Storage Temperature Range VCBO VCEO VCES VEBO IC ICP IB PC Tj Tstg 130 10 0 130 8 5 10 0. 5 20 150 -55 150 UNIT V V V V A A A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM . |
| Manufacture | KEC |
| Datasheet |
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