SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHIN...
SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR
NPN TRANSISTOR
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTA1045D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING 120 120 5 1 2 1.0 8 150
-55 150
UNIT V V V
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30 +_ 0.1
1.00 MAX 2.30 +_ 0.2 0.5 +_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2 E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Volta...