SEMICONDUCTOR
TECHNICAL DATA
KTC2027
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Good Linear...
SEMICONDUCTOR
TECHNICAL DATA
KTC2027
EPITAXIAL PLANAR
NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Good Linearity of hFE.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 80 80 5 4 0.4 25 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
DC Current Gain
hFE(1) (Note) hFE(2)
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
VCE(sat) VBE fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification O:70 140, Y:120 240
TEST CONDITION VCB=80V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 IC=10mA, IB=0 VCE=5V, IC=0.5A VCE=5V, IC=3A IC=3A, IB=0.3A VCE=5V, IC=3A VCE=5V, IC=0.5A VCB=10V, IE=0, f=1MHz
MIN. 80 5 70 15 -
TYP. 50
0.45 1.0 30 40
MAX. 30 100 240 1.5 1.5 -
UNIT A A V V
V V MHz...