SEMICONDUCTOR
TECHNICAL DATA
KTC4793
TRIPLE DIFFUSED NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFI...
SEMICONDUCTOR
TECHNICAL DATA
KTC4793
TRIPLE DIFFUSED
NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS.
FEATURES High Transition Frequency : fT=100MHz(Typ.) Complementary Pair with KTA1837.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 230 230 5 1 0.1 2.0 20 150
-55 150
UNIT V V V A A
W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO V(BR)CEO hFE VCE(sat) VBE fT
Collector Output Capacitance
Cob
TEST CONDITION VCB=230V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=10V, IC=100mA VCB=10V, IE=0, f=1MHz
MIN. -
230 100
-
TYP. -
100 20
MAX. 1.0 1.0 320 1.5 1.0 -
UNIT A A V
V V MHz pF
2007. 5. 22
Revision No :...