KTC3265

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). Suitable for Driver Stage of Small Motor. Complementary to KTA1298. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 35 30 5 800 160 200 150 -55 150 UNIT V V V mA mA mW KTC3265 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking hFE Rank Type Name E Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO VCB=30V, IE=0 IEBO VEB=5V, IC=0 V(BR)CEO VEB=10mA, IB=0 V(BR)EBO IE=1mA, IC=0 hFE(1) (Note) VCE=1V, IC=100mA hFE(2) VCE=1V, IC=800mA VCE(sat) IC=500mA, IB=20mA VBE VCE=1V, IC=10mA fT VCE=5V, IC=10mA, f...