KTC2825D

SEMICONDUCTOR TECHNICAL DATA KTC2825D EPITAXIAL PLANAR NPN TRANSISTOR LED DRIVE APPLICATION FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature Ta=25 TC=25 Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg RATING 60 60 6 3 6 600 1 15 150 -55 150 UNIT V V V A A mA W W A C M G FF 123 E BD H K J DIM MILLIMETERS A 6.6 +_0.2 B 6.1+_ 0.2 C 5.0 +_ 0.2 D 1.1+_ 0.2 E 2.7 +_ 0.2 F 2.3+_ 0.1 G 1.0 MAX N H J 2.3+_ 0.2 0.5+_ 0.1 K 1.0+_ 0.1 L LM 0.5+_ 0.1 0.95 MAX N 0.9+_ 0.1 1. BASE 2. COLLECTOR 3. EMITTER DPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance ICBO IEBO hFE(1) hFE (2) VCE(sat) (1) VCE(sat) (2) VBE(sat) Cob Turn-on Time ton Switching Time Storage Time tstg Fall Time tf TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100 VCE=2V, IC=3A IC=2A, IB=100 IC=360 , IB=2 IC=2A, IB=100 VCB=10V, f=1 , IE=0 PDWC =<=210%µs I B1 R8 INPUT VR 50 I B2 100µ 25 470µ -5V 10IB1=-10IB2 =I C=1A 25V MIN. - 200 35 - TYP. - 0.19 - 0.94 25 MAX. UNIT. 1 1 400 - 0.5 V 0.3 1.2 V - - 35 -...