SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION CAMERA STROBO (For El...
SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR
NPN TRANSISTOR
HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit)
FEATURES Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A) High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width 100mS, Duty Cycle 30%
RATING 40 20 7 5 8 1.0 150
-55 150
UNIT V V V
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2 E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage (1) Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage Transition Frequency
V(BR)CBO V(BR)CEO V(BR)EBO...