KTC3198

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTA1266. KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB 60 50 5 150 50 Collector Power Dissipation 625 *PC 400 Junction Temperature Tj 150 Storage Temperature Range *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW Tstg -55 150 UNIT V V V mA mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE(1) (Note) VCE=6V, IC=2mA hFE(2) VCE=6V, IC=150mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA Transition Frequency fT VCE=10V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Base Intrinsic Resistance rbb’ VCB=10V, IE=1mA, f=30MHz Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k , f=1kHz Note : hFE(1) Classification O:70 140, Y:120 240, GR:200 400, BL:300~700 MIN. 70 25 80 - TYP. - 100 0.1 2.0 50 1.0 MAX. 0.1 0.1 700 0.25 1.0 3.5 10 UNIT A A V V MHz pF dB 2013. 7. 08 Revision No : 3 1/3 KTC3198 2013. 7. 08 Revision No :...