SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E.
KTC4072E
EPITAXIAL PLANAR
NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.
VCBO VCEO VEBO
IC ICP * PC Tj Tstg
RATING 15 12 6 500 1 100 150
-55 150
UNIT V V V mA A mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
ICBO V(BR)CBO V(BR)CEO V(BR)EBO
hFE VCE(sat)
fT
Collector Output Capacitance
Cob
TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz
MIN. 15 12 6
270 -
TYP. 90
320 7.5
MAX. 100 680 250 -
UNIT nA V V V mV MHz pF
2014. 3. 31
Revision No : 3
1/3
KTC4072E
2014. 3. 31
Revision No : 3
2/3
KTC4072E
2014. 3. 31
Revision No : 3
3/3
...