KTC4072E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E. KTC4072E EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS. VCBO VCEO VEBO IC ICP * PC Tj Tstg RATING 15 12 6 500 1 100 150 -55 150 UNIT V V V mA A mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Collector Output Capacitance Cob TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 270 - TYP. 90 320 7.5 MAX. 100 680 250 - UNIT nA V V V mV MHz pF 2014. 3. 31 Revision No : 3 1/3 KTC4072E 2014. 3. 31 Revision No : 3 2/3 KTC4072E 2014. 3. 31 Revision No : 3 3/3 ...